Apparatus for crystal growth
AssigneeHitachi, Ltd.
InventorsKazuhiro Ito, Yuichi Ono, Kiichi Ueyanagi, Makoto Morioka, Masao Kawamura
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AssigneeHitachi, Ltd.
InventorsKazuhiro Ito, Yuichi Ono, Kiichi Ueyanagi, Makoto Morioka, Masao Kawamura
Estimating the term…
In order to eliminate non-uniformity in the temperature within the plane of a substrate that causes dispersions or variations in the characteristics of a grown layer during liquid phase epitaxial growth and to produce a grown layer having uniform characteristics, an apparatus for crystal growth according to the invention holds a substrate on a jig so that a flat surface of the substrate is arranged tangentially to an isothermal plane within the jig and aslant with respect to any position perpendicular or parallel to the axis or the center plane of the jig. Where a multiplicity of substrates are set, they are held on at least two flat surfaces which are tangential to an identical isothermal plane and which have different slopes.
An apparatus for crystal growth in the liquid phase comprising:
An apparatus for crystal growth in the liquid phase comprising:
Dependencies are inferred from the claim text.