Method of making resistive films
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKiyotaka Wasa, Fumio Hosomi, Shigeru Hayakawa
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Abstract
A resistive film composition consisting essentially of AlN and solid solution of TiN and ZrN and a method of making the same by means of cathodic sputtering.
Claims5
A method of making a thin resistive film comprising cathodically sputtering the thin resistive film onto a substrate from a composite cathode consisting essentially of Al, Ti and Zr and having a structure such that the surface area is 5 to 40% Al, 15 to 85% Ti and 10 to 80% Zr, the ratio of the area Al to Ti being less than 0.7, in a nitriding atmosphere at a pressure of 10.sup.-.sup.4 to 10.sup.-.sup.3 Torr.
A method of making a thin resistive film comprising cathodically sputtering the thin resistive film onto a substrate from a composite cathode consisting essentially of 10 to 50 mole % of AlN, 10 to 80 mole % of ZrN and 10 to 80 mole % of TiN, the mole ratio of the AlN to TiN being less than 1.2, in a non-reactive gas at a pressure of 10.sup.-.sup.4 to 10.sup.-.sup.3 Torr.
Dependencies are inferred from the claim text.