Semiconductor thermally sensitive switch structure
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorJosuke Nakata
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Abstract
A thermally sensitive semiconductor switch structure has a nichrome strip vacuum evaporated and sintered in a zigzag pattern on a ceramic substrate and a silicon pellet disposed on the substrate through the nichrome strip and a glass layer. A thyristor is provided in the silicon pellet and is electrically insulated from the nichrome strip. The thyristor is adapted to be heated by a current flowing through the nichrome strip and to be turned on upon its reaching a predetermined temperature. When its temperature decreases below the predetermined magnitude, it is turned off.
Claims7
A semiconductor thermally sensitive switch structure comprising a thermally sensitive semiconductor switch element including at least four semiconductor layers of alternate conductivity and having p-n junctions between said layers and which element can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonnconducting state, electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in the circuit, and heater means on said switch element for heating said semiconductor switch element to switch the latter from its nonconducting state to its conducting state, said heater means being electrically insulated from said semiconductor switch element.
A semiconductor thermally sensitive switch structure comprising a substrate of electrically insulating material, heater means fixedly secured to one surface of said substrate, an electrically insulating layer disposed on the one surface of said substrate including said heater means, and a semiconductor switch element disposed on said electrically insulating layer in electrically insulated relationship with said heater means, and a semiconductor switch element disposed on said electrically insulating layer in electrically insulated relationship with said heater means, said semiconductor switch element including at least four thermally sensitive semiconductor layers of alternate conductivity and having pn junctions between said layers and which elements can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonconducting state, and electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in said circuit, said switch element being heated by said heater means to switch from its nonconducting state to its conducting state.
A semiconductor thermally sensitive switch structure comprising a substrate of electrically insulating material, a semiconductor switch element disposed on said substrate, said semiconductor switch element including at least four thermally sensitive semiconductor layers of alternate conductivity and having pn junctions between said layers and which element can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonconducting state, and electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in said circuit, said switch element heater means disposed on said semiconductor switch element and an electrically insulating layer between said switch element and said heater means, said heater means heating said semiconductor switch element to switch the latter from its nonconducting state to its conducting state.
Dependencies are inferred from the claim text.