In a random access memory of the class wherein
- a plurality of memory cells, all of substantially identical electrical characteristics, are disposed in a two dimensional array of rows and columns such that each one of said memory cells appears in one of the rows and in one of the columns,
- said memory being comprised of a semiconducting material, a plurality of first electrodes, a plurality of second electrodes, a plurality of row conductive means, and a plurality of column conductive means,
- said first and said second electrodes being in proximity to and electrically insulated from said semiconducting material, and
- each of said memory cells being comprised of one of said first electrodes and one of said second electrodes, and
- said row conductive means being electrically connected to the said memory cells such that the said first electrodes of all of those said memory cells appearing in the same one of the said rows are connected in common, and
- said column conductive means being electrically connected to said memory cells such that the said second electrodes of all of those said memory cells appearing in the same one of the said columns are connected in common,
- in each of the said memory cells, a first inversion region is formed in the semiconducting material by maintaining the electrical potential between each of the said first electrodes and the said semiconducting material within an appropriate range of potentials,
- to store a 0 in any one of the said memory cells, a relatively small number of minority carriers is stored in the said first inversion region of that said one memory cell, and
- to store a 1 in any one of the said memory cells, a relatively large number of minority carriers is stored in the said first inversion region of that said one memory cell, and
- in said memory, the minimum time interval required to enter datum in any particular one of said memory cells is substantially independent of the location of that said one memory cell, and
- in said memory, the minimum time interval required to recall the datum stored in any particular one of said memory cells is substantially independent of the location of that said one memory cell,
- a method of non-destructively recalling the data stored in any particular one of said columns of memory cells comprising the steps of
- applying an appropriate potential between said semiconducting material and that one of said column conductive means which is connected to the said second electrodes of those said memory cells in said particular column of memory cells, such that
- within each of said memory cells in said particular column of memory cells, a second inversion region in said semiconducting material is formed such that each one of said second inversion regions is isolated and distinct from every other one of said second inversion regions, and such that
- within each of said memory cells in the said particular column of memory cells, the said second inversion region formed therein overlaps the said first inversion region formed therein, such that minority carriers stored in the said first inversion region in each particular one of said memory cells in said particular column of memory cells, transfer to and remain within the said second inversion region formed in said particular one memory cell,
- transferring back to within each of said first inversion regions in said particular column of memory cells substantially the same number of minority carriers stored therein just prior to the previously described transfer of said minority carriers from said first inversion regions to said second inversion regions, by applying a second appropriate potential between said semiconducting material and that one of the said column conductive means which is connected to the said second electrodes of those said memory cells in said particular column of memory cells, such that said second inversion regions are extinguished and such that upon extinguishing said second inversion regions, most of any minority carriers which had transferred from a particular one of said first inversion regions to a particular one of said second inversion regions transfer back to said particular one of said first inversion regions,
- utilizing the charge flow on each of the said row conductive means resulting from the aforementioned transfers of minority carriers between said first and said second inversion regions to determine the data stored in the said memory cells in said particular column of memory cells.