High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium

In a method wherein liquid phase epitaxial growth on a solid substrate is induced or altered by passing an electrical current through the liquid-solid interface, an improved method for making electrical contact to the substrate when the substrate is an intermetallic III-V compound of gallium, comprising the steps of pressing a substantially flat graphite surface with which electrical contact may be made toward a substantially flat clean surface of a substrate composed of an intermetallic III-V compound of gallium and interposing between said flat surfaces a liquid layer of gallium in which aluminum has been dissolved to a concentration of more than 0.5% by weight.