Planar transferred electron logic device
AssigneeRCA Corporation
InventorChainulu Lakshminarasimha Upadhyayula
Life of this patent
Estimating the term…
Abstract
A planar transferred electron device is biased such that the voltage across the anode and cathode electrodes is above that of a threshold voltage in the presence of which the device is characterized by a transfer of electrons from a high to a low mobility sub-band and the formation of domains. A reverse biasing potential is applied between the gate and cathode electrodes which is of sufficient magnitude to cause in the quiescent state the suppression of the formation of these domains. When signals above a given level are provided between the gate and cathode electrodes, the device operates according to a transferred electron effect including the formation of the domains.
Claims3
A planar transferred electron logic device comprising:
- a planar body of bulk semiconductor material of one conductivity type having a cathode conductive terminal near one end and an anode conductive terminal near the opposite end and a gating terminal spaced near said cathode terminal, said gating terminal comprising a conductive member adjacent to said body of semiconductor material to form a Schottky barrier junction therewith, said body material having a doping density, length and a thickness selected such that said body is characterized by a transfer of electrons from a high to a low mobility sub-band and the formation of domains upon the application of an electric field above threshold, means for applying a first D.C. potential of a first polarity across said cathode and anode terminals with a value above that of threshold, means for providing sufficient reverse biasing of the gate terminal with respect to said cathode terminal to suppress the formation of domains, said gating terminal being responsive to a control signal above a given level causing the formation of said domains.
Dependencies are inferred from the claim text.