Semiconductor device having supporting electrode composite structure of metal containing fibers

A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said fibers being arranged in said metal matrix in parallel with the surface of said semiconductor substrate.

A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said fibers being arrayed in said metal matrix in parallel with the surface of said semiconductor substrate in such a fashion that the content thereof in said metal matrix is gradually reduced from the matrix portion engaging said semiconductor substrate toward the matrix portion remote from said semiconductor substrate.

A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said plurality of fibers crossing one another to form a plurality of networks which are disposed in said metal matrix in parallel with the surface of said semiconductor substrate.

A semiconductor device comprising a semiconductor substrate having major surfaces, said semiconductor substrate being one selected from the group of silicon and germanium and a supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of copper and a plurality of tungsten fibers embedded in said copper matrix in parallel with said at least one major surface of the semiconductor substrate.