Semiconductor device
AssigneeHitachi, Ltd.
InventorsHideo Iwasawa, Yoshiaki Wakashima, Hideo Inayoshi
Life of this patent
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Abstract
In a semiconductor device, the surface of a semiconductor element is covered with a silicone varnish in which the side chain radical ratio between methyl radicals and phenyl radicals is 20:1 or greater, whereby the element is effectively shielded from the external moisture.
Claims8
A semiconductor device comprising a semiconductor element having at least one P--N junction therein and a covering of a silicone varnish on a surface, of said semiconductor element, said silicone varnish containing methyl radicals and phenyl radicals as side chain radicals and having in the side chain radicals a ratio between said methyl radicals and said phenyl radicals of at least 20:1.
A method for producing a semiconductor device comprising applying a silicone varnish onto a surface of a semiconductor element having at least one P--N junction therein, said silicone varnish containing methyl radicals and phenyl radicals as side chain radicals and having in the side chain radicals, a ratio between said methyl radicals and said phenyl radicals of at least 20:1, and curing the applied silicone varnish at an elevated temperature.
Dependencies are inferred from the claim text.