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US 3,946,415 AGranted
Normally off schottky barrier field effect transistor and method of fabrication
AssigneeHarris Corporation
InventorKoy B. Cook, Jr.
Life of this patent
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Abstract
A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.
Claims10
A normally off field effect transistor comprising:
- a substrate of a first conductivity type semiconductor material;
- a source and drain in said substrate of a conductivity type opposite said first conductivity type and separated by a channel region of said substrate;
- a first layer of substantially undoped semiconductor material of said first conductivity type contacting and covering a surface of said channel region;
- and
- a metal gate layer upon said first layer and forming a Schottky barrier with said first layer.
2 more elements
A Schottky barrier transistor comprising:
- a substrate of first conductivity type semiconductor material;
- a source and drain region of conductivity type opposite said first conductivity type spaced from each other in said substrate and electrically disconnected in an unbiased state;
- a first layer of substantially undoped semiconductor material of said first conductivity type contacting type contacting said source and drain regions and a surface of said substrate between said source and drain regions;
- and
- a layer of gate material substantially covering said layer of substantially undoped semiconductor material to form a Schottky barrier therewith.
2 more elements
Dependencies are inferred from the claim text.