Process for simultaneous development and etch of photoresist and substrate

In a process for processing a photoresist which consists in:

• preparing a resist by applying a non-silver photosensitive layer to a suitable substrate, said layer having a composition which consists essentially of (1) an N-vinyl amine, (2) an organic halogen compound in which at least three atoms of a halogen selected from the group consisting of Cl, Br and I are attached to a single carbon atom, and (3) a binder;
• said photosensitive layer having a thickness between about 0.5 and 5 microns thick;
• imagewise exposing said layer to a pattern of actinic radiation in an amount sufficient to produce a change in said layer;
• and then fixing said layer by heating to between about 80.degree. and 160.degree.C for up to about 1 minute to fix the image formed in said layer by said preceding exposure;
• the improvement which comprises:
• thereafter contacting said layer with a liquid which comprises (1) a developer for the resist layer which includes a solvent selected from the from the group consisting of lower aliphatic alcohols and (2) an etchant for said substrate, selected from the group consisting of alkalies.