Method of manufacturing shaped hollow bodies
AssigneeSiemens Aktiengesellschaft
InventorsWolfgang Dietze, Andreas Kasper
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Abstract
A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300.degree. C. in a flowing gas atmosphere, preferably a mixture of H.sub.2 and SiHCl.sub.3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.
Claims2
In a method of manufacturing a shaped hollow body composed of a semiconductor material selected from the group consisting of silicon or silicon carbide wherein said semiconductor material is deposited from a gas phase onto a heated graphite substrate so that the surface of said substrate becomes coated with a layer of said semiconductor material and then the substrate is removed for re-use while obtaining the desired shaped hollow body, the improvement comprising:
- heat-treating the graphite substrate prior to deposition of a new layer of said semiconductor material thereon for at least 15 minutes at a temperature in the range of about 1300.degree. C. to about 1600.degree. C. in a gas stream composed of a gas selected from the group consisting of a hydrogen gas nitrogen, and a rare gas said stream having a flow rate in the range of about 200 to 300 liters per hour;
- whereby the surface characteristics of said substrate are altered so as to substantially prevent interaction between graphite and said new layer of the semiconductor material and provide re-usability of the so-treated substrate in the formation of a plurality of shaped hollow bodies.
Dependencies are inferred from the claim text.