Method for controlling the degree of side-etch in thin oxide films by photo-etching process
AssigneeHitachi, Ltd.
InventorsHiroshi Yanazawa, Norikazu Hashimoto, Mikio Ashikawa, Kikuo Douta
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Abstract
In selectively etching a solid oxide thin film which has chemisorbed water (surface hydroxyl groups) in its surface, the thin film is surface-treated with an organic compound which has within its molecule a functional group to react with the surface hydroxyl groups. Thereafter, photo-etching is performed by the conventional method by applying a thin film of a photosensitive organic polymer onto the treated thin film. Through selection of the sort of the organic compound, the degree of side-etch arising in the process of the selective etch can be controlled.
Claims9
A photo-etching method comprising effecting reactor between an organic composition consisting essentialy of an organic compound selected from the group consisting of alcohols, phenols and phenol derivatives and the surface of a solid oxide thin film having chemisorbed hydroxy groups on said surface, at a temperature above the boiling point of said organic compound and at a pressure above atmospheric pressure in an autoclave, the temperature and pressure in said autoclave being sufficient so that said organic compound reacts with said chemisorbed hydroxyl groups, applying a film of a photosensitive organic polymer onto the solid oxide thin film, irradiating a predetermined area of the photosensitive organic polymer film by light, removing a portion of the polymer film by dissolution to form a mask having a predetermined pattern, and selectively etching said solid oxide film by means of said mask.
Dependencies are inferred from the claim text.