Method of producing a semiconductor arrangement
AssigneeLicentia Patent-Verwaltungs-G.m.b.H.
InventorLeonhard Botzenhardt
Life of this patent
Estimating the term…
Abstract
A method of producing a semiconductor arrangement comprises electrolytically depositing a thickening onto a metal layer, at the contact points for the semiconductor arrangement, which metal layer is intended to eventually form conducting paths for the semiconductor arrangement and effectively covers the relevant semiconductor body surface.
Claims10
A method for producing a semiconductor arrangement from a semiconductor body covered with an insulating layer provided with windows at desired points of connection to regions in the semiconductor body, said arrangement having conducting paths running on the insulating layer and contacting the regions in the semiconductor body and the conducting paths at certain points being so reinforced by electrolytically deposited metal that the thickened contact parts resulting in this case are suitable for the wire-less contacting of the semiconductor arrangement, comprising:
- firstly applying a metal layer over said insulating layer provided with windows to cover said insulating layer and said windows;
- covering the portions of said metal layer corresponding to the desired positions of said conducting paths with a first masking layer, which moveover leaves uncovered the portions of said metal layer to be provided with said thickened contact parts;
- thereafter covering the entire semiconductor surface, with the exception of the portions to be provided with said reinforced contact parts, with a second masking layer;
- electrolytically depositing said thickened contact parts on said metal layer at said portions left uncovered by the two masking layers;
- thereafter removing said second masking layer;
- subsequently removing said metal layer at the positions not covered by said first masking layer to produce said conducting paths.
A method of producing contacts and conductive paths for a semiconductor body provided with one or more regions to be contacted comprising:
- applying an insulating layer defining contact windows for said regions to a surface of said semiconductor body;
- covering said insulating layer and said windows with a metal layer;
- forming a first masking layer on said metal layer for covering the portions of said metal layer which are to form conducting paths and leaving exposed undesired portions of said metal layer and portions thereof on which thickened metal contacts for the conductive paths are to be provided;
- covering said first masking layer and the exposed portions of said metal layer with the exception of said portions on which the thickened metal contacts are to be provided with a second masking layer;
- electrolytically depositing said thickened metal contacts on the portions of said metal layer left exposed by both said first and second masking layers;
- thereafter removing said second masking layer;
- and removing the exposed portions of said metal layer to form said conductive paths.
Dependencies are inferred from the claim text.