Manufacturing method for semiconductor device

A semiconductor structure, comprising:

• a first conductive line over a substrate and extending along a first direction;
• a first protection layer lining a top surface of the first conductive line;
• a second conductive line above the first conductive line and extending along the first direction;
• a second protection layer lining a sidewall of the second conductive line;
• a third conductive line above the second conductive line, extending along a second direction perpendicular to the first direction;
• and
• a first conductive via electrically connecting the first conductive line to the third conductive line, wherein the first conductive via is in direct contact with the first protection layer and the second protection layer.

A semiconductor structure, comprising:

• a first conductive line over a substrate and extending along a first direction;
• a second conductive line above the first conductive line and extending along the first direction;
• a protection layer lining a sidewall and a top surface of the second conductive line;
• a third conductive line above the second conductive line, extending along a second direction perpendicular to the first direction;
• and
• a first conductive via electrically connecting the first conductive line to the third conductive line, wherein the first conductive via is in direct contact with a top surface and a sidewall of the protection layer.