Semiconductor device and method of monitoring process defects of semiconductor device

A semiconductor device comprising:

• a substrate including a first active region and a second active region spaced apart from each other;
• and
• a test pattern arranged on the first active region and the second active region,
• wherein the test pattern comprises:
• test structures located on the first active region, each of the test structures including a first insulating layer on the substrate, and a conductive layer on the first insulating layer;
• first test contacts electrically connected to the conductive layer and located on the test structures;
• second test contacts located on the second active region, and electrically connected to the second active region;
• a first test wire electrically connected to the first test contacts;
• and
• a second test wire electrically connected to the second test contacts, and spaced apart from the first test wire.

A method of monitoring process defects of a semiconductor device comprising a substrate including active regions including a first active region and a second active region, a conductive layer located on the substrate and electrically isolated from the active regions, a first test contact electrically connected to the conductive layer, and a second test contact electrically connected to at least one of the active regions, the method comprising:

• applying a first voltage to a first test wire electrically connected to the first test contact;
• applying a second voltage to a second test wire electrically connected to the second test contact;
• and
• determining whether a process defect is present by measuring current flowing between the first test wire and the second test wire.