Filter structures for reducing full width half maximums in light-emitting diode devices

A light-emitting diode (LED) device comprising:

• an LED chip configured to generate light of a first peak wavelength;
• a lumiphoric material arranged to convert at least a portion of the light of the first peak wavelength to light with a second peak wavelength that different than the first peak wavelength, the LED chip and the lumiphoric material providing a first emission spectrum of light having the second peak wavelength and a first full width half maximum value;
• and
• a filter structure on the LED chip, the filter structure configured to provide a second emission spectrum of light having a second full width half maximum value that is less than the first full width half maximum value, the filter structure comprising a band-pass filter having a midpoint of a passband that is within 5 nm of the second peak wavelength.

A light-emitting diode (LED) device comprising:

• a printed circuit board;
• and
• a plurality of light-emitting diode (LED) packages mounted on the board, at least one LED package of the plurality of LED packages comprising:
• a first LED chip configured to generate a first emission spectrum of light having a first peak wavelength in a range from 500 nanometers (nm) to 570 nm and a first full width half maximum value;
• a filter structure on the first LED chip, the filter structure configured to provide a second emission spectrum of light in the range from 500 nm to 570 nm and having a second full width half maximum value that is less than the first full width half maximum value;
• a second LED chip configured to generate light having a second peak wavelength in a range from 600 nm to 650 nm;
• and
• a third LED chip configured to generate light having a third peak wavelength in a range from 430 nm to 480 nm.