Integrated circuit device

A method of manufacturing an integrated circuit device, the method comprising:

• forming a structure on a substrate, the structure comprising a plurality of fin regions and a plurality of etching stop layers disposed one by one on each of the plurality of fin regions, the plurality of fin regions defining a plurality of first trench regions and a plurality of second trench regions, a vertical level of a bottom surface of each of the plurality of second trench regions is closer to a backside surface of the substrate than a vertical level of a bottom surface of each of the plurality of first trench regions;
• forming a first isolation insulating film on the substrate, the first isolation insulating film comprising a plurality of first portions filling the plurality of first trench regions, and a plurality of second portions filling the plurality of second trench regions;
• forming a plurality of source/drain regions disposed one by one on each of the plurality of etching stop layers;
• removing the substrate from the backside surface of the substrate;
• removing the plurality of fin regions other than a partial portion of a first fin region among the plurality of fin regions to expose portions of the etch stop layer, the partial portion of the first fin region covering a selected source/drain region among the plurality of source/drain regions;
• removing exposed portions of the etch stop layer to form an etch stop pattern interposed between the selected source/drain region and the partial portion of the first fin region
• forming a plurality of second isolation insulating films filling spaces defined by each of the first isolation insulating film, the etch stop pattern, and the partial portion of the first fin region;
• forming a contact space by removing the partial portion of the first fin region and the etch stop pattern, the contact space exposes the selected source/drain region;
• and
• forming a backside contact structure in the contact space.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a structure on a substrate, the structure comprising:
• a plurality of fin regions;
• a plurality of etching stop layers disposed one by one on each of the plurality of fin regions;
• a first isolation insulating film covering sidewalls of each of the plurality of fin regions, wherein the first isolation insulating film comprises a plurality of first portions and a plurality of second portions, and a vertical level of a bottom surface of each of the second portions is closer to a backside surface of the substrate than a vertical level of a bottom surface of each of the first portions;
• a plurality of source/drain regions disposed one by one on each of the plurality of etching stop layers;
• a plurality of nanosheet stacks each comprising at least one nanosheet connected to at least one source/drain region of the plurality of source/drain regions;
• and
• a plurality of gate lines on the substrate, each of the plurality of gate lines surrounding the at least one nanosheet of one of the plurality of nanosheet stacks;
• removing the substrate from the backside surface of the substrate;
• removing the plurality of fin regions other than a partial portion of a first fin region among the plurality of fin regions to expose portions of the etch stop layer, the partial portion of the first fin region covering a selected source/drain region among the plurality of source/drain regions;
• removing exposed portions of the etch stop layer to form an etch stop pattern interposed between the selected source/drain region and the partial portion of the first fin region
• forming a plurality of second isolation insulating films filling spaces defined by each of the first isolation insulating film, the etch stop pattern, and the partial portion of the first fin region;
• forming a contact space by removing the partial portion of the first fin region and the etch stop pattern, the contact space exposes the selected source/drain region, the contact space comprises a first space portion and a second space portion, the second space portion being closer to the selected source/drain region than the first space portion, a first width of the first space portion in a first horizontal direction increases toward the selected source/drain region, and a second width of the second space portion in the first horizontal direction decreases toward the selected source/drain region;
• and
• forming a backside contact structure in the contact space.