Showerhead structure, and substrate processing chamber and semiconductor processing apparatus having the same

A substrate processing chamber comprising:

• a reactor;
• a showerhead structure;
• a susceptor disposed facing the showerhead structure;
• a remote plasma source disposed above the reactor;
• and
• a manifold connecting the reactor and the remote plasma source,
• wherein the showerhead structure comprises:
• a first plate comprising a plurality of reactant-gas-inlet holes, at least one source-gas-inlet hole penetrating the first plate via at least one first channel, wherein the first channel is formed horizontally inside of the first plate;
• and
• a second plate comprising a recess extending from a center to a second plate edge of the second plate, a plurality of reactant-gas-outlet holes, and a plurality of source-gas-outlet holes, wherein a plurality of second channels connect the plurality of the reactant-gas-inlet holes to the plurality of the reactant-gas-outlet holes.