Calculating method and calculating program for macro direct-current mobility of semiconductor, and device simulation method using same

Abstract

Provided is a method of calculating a macro DC mobility μ(T) of a semiconductor, in which, in regard to an in-grain mobility μin-grain(T) calculated in that process, assuming that a temperature T [K] is a fluctuation factor, a reciprocal of the in-grain mobility μin-grain(T) is expressed as a linear combination of two or more terms selected from the group consisting of 1/(exp(β/T)−1), T0, T−3/2, T1/2, T3/2, T1, and T2, [where β[K] is a coefficient].

Dependencies are inferred from the claim text.