US 2026/0310093 A1Published application

Operating device and operating method for optical proximity correction

AssigneeUnited Microelectronics Corp.

InventorPin-Han Huang

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Abstract

An operating device is used for an optical proximity correction of a mask pattern. A mask pattern generating unit of the operating device generates the mask pattern for performing development to generate a development pattern. A development pattern evaluating unit generates a size parameter of the development pattern. A light intensity analyzing unit generates a light intensity measurement data of the development pattern. A mask pattern correcting unit calculates an actual bias of a currently processed edge of the mask pattern according to the light intensity measurement data, a step length, and the size parameters of the mask pattern and the target pattern. The mask pattern generating unit adjusts the mask pattern according to the actual bias to obtain an adjusted mask pattern. The adjusted mask pattern is used for further exposure and development to generate an adjusted development pattern.

Claims20

Dependent claims

An operating device, for an optical proximity correction of a mask pattern, the operating device comprising:

a mask pattern generating unit, for generating the mask pattern and a set of size parameters of the mask pattern, and generating a set of size parameters of a target pattern, and providing the mask pattern to a developing system, and the developing system performs exposure and development according to the mask pattern to generate a development pattern;
a development pattern evaluating unit, for evaluating the development pattern to generate a set of size parameters of the development pattern;
a light intensity analyzing unit, for analyzing a light intensity distribution associated with the development pattern to generate a light intensity measurement data;
and
a mask pattern correcting unit, for calculating an actual offset of a currently processed edge of the mask pattern according to the light intensity measurement data, a step length, the set of size parameters of the mask pattern and the set of size parameters of the target pattern, wherein the step length is a distance between a mask exterior reference point and a mask interior reference point,
wherein the mask pattern generating unit adjusts the mask pattern according to the actual offset to obtain an adjusted mask pattern, and the developing system performs exposure and development again according to the adjusted mask pattern to generate an adjusted development pattern.

3 more elements

An operating method, for an optical proximity correction of a mask pattern, the operating method comprising:

generating the mask pattern and a set of size parameters of the mask pattern, by a mask pattern generating unit;
generating a set of size parameters of a target pattern by the mask pattern generating unit, and providing the mask pattern to a developing system;
performing exposure and development by the development system according to the mask pattern to generate a development pattern;
evaluating the development pattern to generate a set of size parameters of the development pattern, by a development pattern evaluating unit;
analyzing a light intensity distribution associated with the development pattern to generate a light intensity measurement data, by a light intensity analyzing unit;
calculating an actual offset of a currently processed edge of the mask pattern according to the light intensity measurement data, a step length, the set of size parameters of the mask pattern and the set of size parameters of the target pattern by a mask pattern correcting unit, wherein the step length is a distance between a mask exterior reference point and a mask interior reference point;
adjusting the mask pattern according to the actual offset by the mask pattern generating unit, so as to obtain an adjusted mask pattern;
and
performing exposure and development again according to the adjusted mask pattern by the developing system, so as to generate an adjusted development pattern.

6 more elements

Dependencies are inferred from the claim text.