Curvilinear lithography masks and geometry-based mask check rules for curvilinear lithography masks

A method of manufacturing a lithography mask, comprising:

• receiving an initial mask design comprising a curved feature;
• determining an edge placement error;
• generating a corrected mask design based on the edge placement error;
• and
• fabricating the lithography mask based on the corrected mask design,
• wherein determining the edge placement error comprises:
• fitting the curved feature by a cosine function to determine a characteristic wavelength and a characteristic amplitude of the cosine function;
• determining a standard deviation of a Gaussian point spread function characterizing diffraction effects associated with a lithography system;
• and
• determining a value of the edge placement error to be proportional to a first ratio of the standard deviation squared divided by the characteristic wavelength squared.

A non-transitory computer-readable storage medium having computer program instructions stored thereon that, when executed by a processor of a controller device, cause the controller device to perform operations comprising:

• receiving an initial mask design comprising a first curved feature;
• determining an edge placement error;
• generating a corrected mask design based on the edge placement error;
• and
• controlling a mask fabrication device to fabricate a lithographic mask based on the corrected mask design,
• wherein determining the edge placement error comprises:
• approximating the first curved feature by a cosine function;
• determining an arc length of the cosine function between two endpoints that are symmetrically located on the first curved feature;
• determining a chord length between the two endpoints;
• and
• determining a value of the edge placement error that is a linear function of a ratio of the arc length to the chord length.