Photolithography method and photolithography system

A photolithography method, wherein the method comprises:

• providing a substrate, forming a negative photoresist layer on the substrate using a negative photoresist, and forming a positive photoresist layer on the negative photoresist layer using a positive photoresist;
• patterning the negative photoresist layer and the positive photoresist layer to form a positive pattern region on the positive photoresist layer and a negative pattern region on the negative photoresist layer, wherein a size of the positive pattern region is larger than a size of the negative pattern region;
• developing the positive photoresist layer with developer for positive photoresist to remove the positive photoresist in the positive pattern region;
• and
• developing the negative photoresist layer with developer for negative photoresist to remove the negative photoresist located near the negative pattern region, thereby providing an exposed region associated with a size of the positive pattern region and a size the negative pattern region, to expose the substrate.

A photolithography method, wherein the method comprises:

• providing a substrate, forming a positive photoresist layer on the substrate using a positive photoresist, forming an interlayer on the positive photoresist layer and forming a negative photoresist layer on the interlayer using a negative photoresist.
• patterning the negative photoresist layer and the positive photoresist layer to form a positive pattern region on the positive photoresist layer and a negative pattern region on the negative photoresist layer, wherein a size of the positive pattern region is larger than a size of the negative pattern region;
• developing the negative photoresist layer with developer for negative photoresist to remove the negative photoresist outside the negative pattern region;
• developing the interlayer with developer for interlayer, or etching the interlayer with a pattern of the developed negative photoresist layer as an anti-etching mask, so that the pattern of the interlayer matches pattern of the developed negative photoresist layer;
• and
• developing the positive photoresist layer with developer for positive photoresist to remove the positive photoresist at an edge portion of the positive pattern region, thereby providing an exposed region associated with a size of the positive pattern region and a size of the negative pattern region, to expose the substrate.