Resist composition and patterning process

Abstract

The present invention is a resist composition containing a germanium compound represented by the following general formula (1) and an organic solvent, where R1 represents a hydrogen atom or a hydrocarbyl group having 1 to 10 carbon atoms and optionally containing a heteroatom; X+ represents an anion represented by a halide ion, a nitrate ion, a hydrogen sulfate ion, a hydrogen carbonate ion, or a tetraphenylborate ion; Y+ is represented by any of the following general formulae (cation-1) to (cation-3); and Rct1 to Rct9 each independently represent a halogen atom or a hydrocarbyl group having 1 to 30 carbon atoms and optionally containing a heteroatom. This can provide: a resist composition that is excellent in sensitivity in photolithography using a high-energy beam, and is stable and can be easily handled; and a patterning process using the resist composition.

Dependencies are inferred from the claim text.