Method of injecting charge into vdmos device, method of detecting radiation dose and electronic device

A method of injecting a charge into a VDMOS device, comprising:

• arranging N VDMOS devices in an ionization chamber, wherein a gate electrode of the VDMOS device is a floating gate, the ionization chamber is configured to define an accommodation space, and N is a positive integer greater than or equal to 1;
• filling the accommodation space with gas, wherein the gas is configured to react with a ray entering the accommodation space to generate a negative charge and a positive charge;
• providing the ray to the ionization chamber, such that the gas is ionized into the negative charge and the positive charge;
• and
• applying a first voltage to the ionization chamber, wherein the first voltage is configured to form a first electric field with a first electric field direction in the accommodation space, such that the positive charge is injected into the floating gate of the VDMOS device, wherein the first electric field direction is a direction in which the floating gate towards a bottom surface of the ionization chamber.