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US 2026/0308752 A1Published application
Substrate processing method and substrate processing system
AssigneeTokyo Electron Limited
InventorsFumiaki TANAKA, Masami OIKAWA, Kazuya KITAMURA, Tomohito YAMAJI, Hideki KUNUGI, Hiroyuki TOMITA, Hiroki MAEHARA, Akiyoshi KONDO
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Abstract
A substrate processing method including a) forming a silicon-containing layer on each of a first surface and a second surface, the second surface is a back surface of the first surface, of a glass substrate; and b) removing the silicon-containing layer formed on the first surface.
Claims20
A substrate processing method comprising:
- a) forming a silicon-containing layer on each of a first surface and a second surface, the second surface is a back surface of the first surface, of a glass substrate;
- and
- b) removing the silicon-containing layer formed on the first surface.
A substrate processing system comprising:
- a layer forming apparatus to form a silicon-containing layer on each of a first surface and a second surface, which is a back surface of the first surface, of a glass substrate;
- a removing apparatus to remove the silicon-containing layer formed on the first surface of the glass substrate;
- and
- a processing apparatus to execute processing of at least one of layer formation or etching on the first surface of the glass substrate from which the silicon-containing layer is removed.
1 more element
A substrate processing method comprising:
- c) forming a silicon-containing layer on each of a first surface and a second surface, the second surface is a back surface of the first surface, of a glass substrate;
- and
- d) forming a pattern on the silicon-containing layer formed on the first surface.
A substrate processing system comprising:
- a layer forming apparatus to form a silicon-containing layer on each of a first surface and a second surface, the second surface is a back surface of the first surface, of a glass substrate;
- and
- a processing apparatus to form a pattern on the silicon-containing layer formed on the first surface by executing processing of at least one of layer formation or etching on the silicon-containing layer formed on the first surface.
Dependencies are inferred from the claim text.