Method for manufacturing semiconductor device, and semiconductor device

A method for manufacturing a semiconductor device, comprising:

• preparing a first semiconductor substrate including a first substrate body, a first insulating film provided on a surface of the first substrate body, and at least one first electrode and at least one first dummy electrode that are provided on the surface of the first substrate body;
• preparing a second semiconductor substrate including a second substrate body, a second insulating film provided on a surface of the second substrate body, and at least one second electrode provided on the surface of the second substrate body;
• arranging the first semiconductor substrate and the second semiconductor substrate such that the first insulating film and the second insulating film face each other and the first electrode and the second electrode are aligned;
• bonding the first insulating film and the second insulating film to each other;
• and
• bonding the first electrode and the second electrode to each other,
• wherein the second insulating film is an organic insulating film, and
• wherein the first dummy electrode is configured to be at least partially embedded in the second insulating film.