Method for manufacturing semiconductor device, and curable resin composition

A method for manufacturing a semiconductor device, comprising:

• preparing a first circuit member comprising a first substrate, a first electrode, and a first insulating film, the first electrode and the first insulating film being provided on the first substrate, the first insulating film forming an opening, and the first electrode being provided in the opening;
• preparing a second circuit member comprising a second substrate, a second electrode, and a second insulating film, the second electrode and the second insulating film being provided on the second substrate, the second insulating film forming an opening, and the second electrode being provided in the opening;
• disposing the first circuit member on a stage in an orientation such that the first substrate is positioned on the stage side;
• holding the second circuit member on a preliminary thermocompression head in an orientation such that the second substrate is in contact with the preliminary thermocompression head;
• thermocompression-bonding the second circuit member held on the preliminary thermocompression head to the first circuit member on the stage in an orientation such that the first electrode and the second electrode face each other, by the preliminary thermocompression head heated such that a maximum temperature of the preliminary thermocompression head is a preliminary thermocompression temperature, the preliminary thermocompression temperature being 250° C. or less, thereby forming a preliminary thermocompression bonded body comprising the first circuit member and the second circuit member;
• and
• forming a bonded body comprising the first circuit member and the second circuit member, the first insulating film and the second insulating film being bonded together and the first electrode and the second electrode being bonded together, by pressurizing the preliminary thermocompression bonded body while heating to a bonding temperature equal to or higher than the preliminary thermocompression temperature,
• wherein
• at least one of the first substrate or the second substrate is a semiconductor substrate having a circuit surface,
• when the first substrate is a semiconductor substrate having a circuit surface, the first electrode and the first insulating film are provided on the circuit surface, and when the second substrate is a semiconductor substrate having a circuit surface, the second electrode and the second insulating film are provided on the circuit surface,
• at least one of the first insulating film or the second insulating film is an organic insulating film,
• a plurality of the second circuit members are sequentially thermocompression-bonded to the first circuit member by the preliminary thermocompression head while maintaining a temperature of the preliminary thermocompression head within a range of a predetermined minimum temperature or more and the preliminary thermocompression temperature or less, and
• the minimum temperature is a temperature of 70° C. or more and the preliminary thermocompression temperature or less.