Method for manufacturing semiconductor device

Abstract

Disclosed is a method for producing an interposer using an encapsulation resin. In this method, a mask M having an exposure pattern is disposed above a resist layer 30 formed on a resist layer 20, and the resist layer 20 and the resist layer 30 are collectively exposed. The exposed resist layers 20 and 30 are collectively developed to obtain an opening pattern P. A metal pillar 40 is formed in the opening pattern P with a metal plating solution. In this method, an opening 31 formed in the outer resist layer 30 has a diameter or a width R2 larger than a diameter or a width R1 of an opening 21 formed in the inner resist layer 20. This arrangement facilitates permeation of the metal plating solution from the opening 31 toward the opening 21, thereby resulting in formation of the metal pillar 40 sufficient in height.

Dependencies are inferred from the claim text.