Method for manufacturing semiconductor device, and insulating resin material
AssigneeResonac Corporation
InventorsKeiko UENO, Sadaaki KATO, Dongchul KANG
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AssigneeResonac Corporation
InventorsKeiko UENO, Sadaaki KATO, Dongchul KANG
Estimating the term…
A semiconductor member 10 having minute copper pillars 12 and solder bumps 13, which are micro-bumps, is prepared. An underfill material is applied and spread on the semiconductor member 10 so as to cover the copper pillars 12 and the solder bumps 13, and is cured. This forms an insulating resin layer 20 that is thicker than the height of connection portions 14. The thick insulating resin layer 20 is ground by a CMP equipment to expose surfaces 13a of the solder bumps 13A from the insulating resin layer. According to this method, the height uniformity and the surface smoothness of the bumps 13 can be improved. Voids are also less likely to occur due to the improved surface smoothness. Since the insulating resin layer 20 covers each bump 13, bridges are also less likely to occur. This method may be applied to CoW and WoW.
A method for manufacturing a semiconductor device, the method comprising:
An insulating resin material for use in forming the insulating resin layer in a method for manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.