Apparatus and method for wafer bonding

A method for die-to-wafer bonding, the method comprising:

• placing a wafer over a channel plate;
• forming a gas pocket between the channel plate and the wafer to form a first locally protruding region on the wafer;
• placing a first die on the first locally protruding region on the wafer;
• and
• bonding the first die to the wafer at the first locally protruding region.

A method for die-to-wafer bonding, the method comprising:

• placing a wafer over a channel plate, the channel plate being coupled to a manifold comprising a plurality of passages;
• aligning a first passage within the manifold to a first channel within the channel plate, wherein the first passage is coupled to a gas flow line;
• supplying gas through the first passage and the first channel to form a gas pocket between the wafer and the channel plate, wherein the gas pocket deforms the wafer to form a locally protruding region;
• and
• bonding a first die to the wafer at the locally protruding region.