Methods for making high-density interconnects in advanced semiconductor packaging
AssigneePurdue Research Foundation
InventorsTiwei Wei, Ainur Sabirova
Life of this patent
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Abstract
The invention generally relates to methods for making high-density interconnects in advanced semiconductor packaging. In certain aspects, the invention provides methods for making high-density interconnects on a substrate that involve coupling a first single layer membrane to a substrate, wherein the first single layer membrane has a first patterned lay-out that comprises first horizontal lines and first vertical vias; conducting an electroplating process to produce first horizontal metal lines and first vertical metal vias on the substrate; and releasing the first single layer membrane from the substrate that now comprises a first pattern of the first horizontal metal lines and the first vertical metal vias.
Claims20
A method for making high-density interconnects on a substrate, the method comprising:
- coupling a first single layer membrane to a substrate, wherein the first single layer membrane has a first patterned lay-out that comprises first horizontal lines and first vertical vias;
- conducting an electroplating process to produce first horizontal metal lines and first vertical metal vias on the substrate;
- and
- releasing the first single layer membrane from the substrate that now comprises a first pattern of the first horizontal metal lines and the first vertical metal vias.
A method of making a single layer membrane having a patterned lay-out, the method comprising:
- providing a polymer membrane;
- attaching the polymer membrane to a tape film;
- coupling a patterned photomask to the polymer membrane, the patterned photomask comprising a pattern of distributed cylindrical isopores;
- exposing the polymer membrane and patterned photomask to light to thereby etch the pattern from the photomask onto the polymer membrane;
- and
- removing the tape film, thereby producing a single layer membrane having a patterned lay-out.
A method of making making high-density interconnects on a substrate using one or more single layer membranes, each having a distinct patterned lay-out, wherein the method is conducted without use of photolithography or chemical polishing.
Dependencies are inferred from the claim text.