Devices and methods involving heat-dissipation via engineered interlayer adjacent diamond

Abstract

In certain examples, methods and semiconductor structures are directed to an apparatus such as a semiconductor device including a substrate material being susceptible to collecting or generating heat due to nearby electrical conductivity, a diamond material to spread and transfer heat from the substrate material, and an interlayer material located between the substrate material and the diamond material. The interlayer material is characterized by having a TBR (thermal boundary resistance) and having an interlayer-material cross-sectional thinness metric with an upper limit engineered via a material deposition technique to mitigate phonon transport loss for realizing a target or a corresponding TBR associated with the interlayer material.

Dependencies are inferred from the claim text.