Dual side stealth dicing for forming memory chips

A memory device, comprising:

• a first semiconductor layer comprising a first crystal orientation;
• a bonding material comprising a first side coupled with the first semiconductor layer;
• and
• a second semiconductor layer associated with a second crystal orientation and coupled with a second side of the bonding material, wherein the second semiconductor layer comprises a stealth dicing modified layer.

A memory device, comprising:

• a first semiconductor wafer on a first side of a stack of wafers, the first semiconductor wafer comprising a first semiconductor layer comprising a first crystal orientation;
• a bonding material comprising a first side coupled with the first semiconductor layer;
• and
• a second semiconductor wafer on a second side of the stack of wafers, the second semiconductor wafer comprising a second semiconductor layer associated with a second crystal orientation and coupled with a second side of the bonding material, wherein the second semiconductor layer comprises a stealth dicing modified layer, wherein the memory device is formed by:
• performing a first stealth dicing operation on the stack of wafers;
• reducing a first dimension of the first semiconductor wafer after performing the first stealth dicing operation;
• performing a second stealth dicing operation on the second semiconductor wafer after reducing the first dimension of the first semiconductor wafer;
• and
• singulating the stack of wafers to form a plurality of memory devices, wherein the memory device of the plurality of memory devices comprises a portion of the first semiconductor wafer and a portion of the second semiconductor wafer.