Full-color micro-led chip, display device, and manufacturing method

A full-color Micro-LED chip, comprising:

• a substrate layer;
• and
• a functional layer, disposed on the substrate layer, wherein the functional layer comprises an n-type semiconductor layer and a quantum well layer that are arranged in a stacked manner in a second direction;
• the functional layer comprises at least one unit group, each unit group comprises a first sub-unit, a second sub-unit, and a third sub-unit that are distributed in a first direction, and the first direction intersects with the second direction;
• the quantum well layer of the first sub-unit comprises a blue quantum well layer;
• the quantum well layer of the second sub-unit comprises a blue quantum well layer and a green quantum well layer that are sequentially arranged in a stacked manner on the n-type semiconductor layer in the second direction;
• the quantum well layer of the third sub-unit comprises a blue quantum well layer, a green quantum well layer, and a red quantum well layer that are sequentially arranged in a stacked manner on the n-type semiconductor layer in the second direction;
• and
• a surface of the blue quantum well layer of the first sub-unit away from the n-type semiconductor layer, a surface of the green quantum well layer of the second sub-unit away from the n-type semiconductor layer, and a surface of the red quantum well layer of the third sub-unit away from the n-type semiconductor layer are flush.