US 2026/0304838 A1 · SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

Abstract

This semiconductor device includes a thin film transistor comprising, on a substrate: an oxide semiconductor layer, which comprises an impurity region containing boron as an impurity and a channel region, and in which an atomic ratio of In to all metal elements is 70 atom % or more; a plurality of insulating film layers; and a plurality of metal layers. The linear mobility μlin of the thin film transistor is 15 cm2/Vs or more and the threshold voltage Vth of the thin film transistor is more than −2.4 V.

Claims17

Dependent claims

A semiconductor device comprising a thin film transistor,

wherein it comprises an oxide semiconductor layer which comprises an impurity region containing boron as an impurity, and
a channel region, and
in which the atomic percent of In is 70 atom % or more based on all metal elements,
a plurality of insulating film layers, and
a plurality of metal layers,
on a substrate,
wherein a linear mobility μlin thereof is 15 cm2/Vs or more, and a threshold voltage Vth thereof is more than −2.4 V.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

19/476,440Filed 18 Apr 2024

Priority

JP 2023-06889519 Apr 2023

Published

1 Oct 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 62/60
Semiconductor bodies, or regions thereof, of devices having potential barriers: impurity distributions or concentrations

Semiconductor device and electronic apparatus

Life of this patent

Semiconductor device and electronic apparatus

Life of this patent

Abstract

Claims17