Electronic device with galvanic isolation and integration methods

A method of fabricating an electronic device comprising:

• forming a molding material over an integrated circuit chip;
• forming an interposer including a dielectric material and an interconnect structure, the interposer being arranged below the integrated circuit chip;
• and
• forming a galvanic capacitor below the molding material, the galvanic capacitor having a first electrode and a second electrode, wherein forming the galvanic capacitor includes forming the first electrode within the dielectric material of the interposer and forming the second electrode on or within the dielectric material of the interposer, the first electrode of the galvanic capacitor is coupled to the integrated circuit chip, wherein each of the first electrode and the second electrode is laterally spaced from a portion of the interconnect structure located below the integrated circuit chip.