Memory device and method for forming the same
AssigneeNanya Technology Corporation
InventorHsuan Han CHEN
Life of this patent
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Abstract
A memory device includes a substrate and a capacitor structure over the substrate. The capacitor structure includes a bottom electrode, a dielectric structure over the bottom electrode, and a top electrode over the dielectric structure. The dielectric structure includes a bottom barrier layer made of aluminum oxide, a top barrier layer made of aluminum oxide over the bottom barrier layer, and a stack of dielectric layers made of zirconium-doped hafnium oxide and at least one inserting layer made of aluminum oxide between the bottom barrier layer and the top barrier layer, wherein the at least one inserting layer is between adjacent two of the dielectric layers.
Claims20
A memory device, comprising:
- a substrate;
- and
- a capacitor structure over the substrate, comprising:
- a bottom electrode;
- a dielectric structure over the bottom electrode, comprising:
- a bottom barrier layer made of aluminum oxide;
- a top barrier layer made of aluminum oxide over the bottom barrier layer;
- and
- a stack of dielectric layers made of zirconium-doped hafnium oxide and at least one inserting layer made of aluminum oxide between the bottom barrier layer and the top barrier layer, wherein the at least one inserting layer is between adjacent two of the dielectric layers;
- and
- a top electrode over the dielectric structure.
A method for forming a memory device, comprising:
- forming a capacitor structure over a substrate, comprising:
- forming a bottom electrode;
- forming a dielectric structure over the bottom electrode, comprising:
- forming a bottom barrier layer made of aluminum oxide;
- forming a stack of dielectric layers made of zirconium-doped hafnium oxide and at least one inserting layer made of aluminum oxide over the bottom barrier layer, wherein the at least one inserting layer is between adjacent two of the dielectric layers;
- and
- forming a top barrier layer made of aluminum oxide over the stack of the dielectric layers and the at least one inserting layer;
- and
- forming a top electrode over the dielectric structure.
Dependencies are inferred from the claim text.