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US 2026/0299403 A1Published application
Euv reticle with charge dissipation structure
AssigneeIntel Corporation
InventorsShakul TANDON, Kimberly PIERCE, Mark PHILLIPS, Yongbae KIM, Robert RODRIGUEZ, Chetana SINGH, Divya GARG, Michael MELLOTT, Benjamin MCCARTY, Harsha GRUNES
Life of this patent
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Abstract
Provided is a reticle with charge dissipation structures for protecting reflector stack portions that may be part of a black border region of the reticle.
Claims20
A reticle apparatus, comprising:
- an active stack region;
- and
- a frame region that includes a reticle stack section and a black border section, the black border section including a reticle stack portion, and the reticle stack section including a corresponding black border portion, wherein the black border section includes a charge dissipation (CD) structure coupled between the reticle stack portion and the active stack region.
A method of fabricating an integrated circuit wafer, comprising:
- reflectively scanning from a reticle a reticle pattern onto a first field of the wafer, the field including an active region and a scribe region that includes a metrology cell, wherein the metrology cell is scanned from a reticle stack portion of the reticle, the reticle stack portion being within a black border trench and being coupled to an active stack region of the reticle through a charge dissipation (CD) structure;
- and
- reflectively scanning from the reticle the reticle pattern onto a second field of the wafer, wherein the reticle pattern includes an unexposed portion that overlaps with the metrology cell.
A system, comprising:
- an extreme ultra-violet (EUV) reticle that includes:
- an active stack region;
- and
- a frame region that includes a reticle stack section and a black border section, the black border section including a reticle stack portion, and the reticle stack section including a corresponding black border portion, wherein the black border section includes a charge dissipation (CD) structure coupled between the reticle stack portion and the active stack region;
- an EUV radiation source;
- an illuminator to illuminate the EUV radiation onto the reticle;
- and
- a wafer platform to support a semiconductor wafer to be scanned with radiation reflected from the reticle.
5 more elements
Dependencies are inferred from the claim text.