A method for operating a chemical vapor deposition process

Abstract

A method for operating a chemical vapor deposition, CVD, process, including providing a substrate in a reaction zone of a reaction chamber, providing at least one precursor gas flow into the reaction chamber, the precursor gas including precursor molecules, heating the reaction chamber to a temperature that is greater than a reaction onset temperature of the precursor molecules, and providing at least one inert diffusion additive gas into the reaction chamber, the inert diffusion additive including inert diffusion additive molecules, wherein the inert diffusion additive molecules have a greater molecular mass than the precursor molecules, and wherein a partial pressure of the inert diffusion additive gas is greater than a partial pressure of the precursor gas. Further a protective layer may be disposed on a substrate having at least one high aspect ratio feature.

Dependencies are inferred from the claim text.