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US 2026/0297730 A1Published application
Topology-selective deposition method and structure formed using same
AssigneeASM IP Holding B.V.
InventorsWilliam George Petro, Paul Ma, Jereld Lee Winkler
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Abstract
A topology-selective deposition method is disclosed. An exemplary method includes providing blocking molecules within a reaction chamber and providing a precursor within the reaction chamber, wherein the blocking molecules inhibit deposition on a top surface of the substrate, relative to a surface within a gap on the substrate surface.
Claims20
A topology-selective method of depositing material within a gap on a surface of a substrate, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising the gap on the surface of the substrate, the gap comprising a gap opening width and a gap height;
- providing blocking molecules within the reaction chamber, the blocking molecules having a blocking molecule dimension greater than the gap opening width;
- and
- providing a precursor within the reaction chamber, the precursor comprising precursor molecules having a precursor dimension less than the gap opening width,
- wherein the blocking molecules inhibit deposition on a top surface of the substrate, relative to a surface within the gap.
2 more elements
Dependencies are inferred from the claim text.