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US 2026/0297466 A1Published application
Cleaning composition and method of forming photoresist pattern using the same
AssigneeDongwoo Fine-Chem Co., Ltd.
InventorsGI JIN KWUN, BAEK HYUN CHO, HYUNG SUB CHOI
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Abstract
A cleaning composition includes an alcohol-based solvent and an organic acid having 6 to 10 carbon atoms. A content of the organic acid is in a range from 0.001 ppm to 100 ppm based on a total weight of the composition. The cleaning composition provides improved pattern stability and enhanced capability of removing a photoresist residue.
Claims10
A cleaning composition comprising:
- an alcohol-based solvent;
- and
- an organic acid having 6 to 10 carbon atoms,
- wherein a content of the organic acid is in a range from 0.001 ppm to 100 ppm based on a total weight of the composition.
1 more element
Dependencies are inferred from the claim text.