Method for manufacturing anti-glare glass

A method for manufacturing anti-glare glass, comprising the following steps:

• step 1:
• performing surface cleaning on a glass substrate;
• step 2:
• depositing a film layer on a surface of the glass substrate;
• step 3:
• coating the film layer with photoresist;
• step 4:
• carrying out exposure, development and film layer etching;
• and
• step 5:
• performing dry etching to directionally etch a longitudinal depth of the glass, followed by wet etching to simultaneously etch in both longitudinal and transverse directions to obtain a specific aspect ratio and increase an anti-glare area;
• or performing wet etching to construct a preliminary morphology on the glass surface, followed by dry etching to achieve precise depth control and feature shaping in specific areas,
• wherein
• a process flow in step 5 is as follows:
• dry etching of glass→photoresist stripping→wet etching of glass 1→film layer removal→wet etching of glass 2;
• or dry etching of glass→wet etching of glass 1→photoresist stripping→film layer removal→wet etching of glass 2;
• or photoresist stripping→dry etching of glass→wet etching of glass 1→film layer removal→wet etching of glass 2;
• or photoresist stripping→wet etching of glass 1→dry etching of glass→film layer removal→wet etching of glass 2;
• or wet etching of glass 1→photoresist stripping→dry etching of glass→film layer removal→wet etching of glass 2;
• or wet etching of glass 1→dry etching of glass→photoresist stripping→film layer removal→wet etching of glass 2;
• in step 2, a thickness of the film layer ranges from 50 Å to 3000 Å, and the film layer is formed by vacuum deposition or evaporation deposition;
• in step 3, a thickness of the photoresist ranges from 0.5 μm to 20 μm;
• the coating is performed by a slot die coating method, with a coating speed controlled within a range of 10-200 mm/s, and a spray pressure maintained at 0.03-0.98 MPa;
• and after the coating, a soft bake is carried out at 50-200°C for 30-300 s;
• in step 4, for the exposure process, a contact aligner, a proximity aligner, or a projection aligner is selected according to batch and resolution requirements, with exposure energy ranging from 50 mJ/cm2 to 500 mJ/cm2;
• in step 4, the development lasts for 30-90 s and is maintained at a constant temperature within a range of 20-30°C, and a conductivity of a developing solution is kept within a range of 1-80 mS/cm;
• after the development, a post-development bake is carried out at 50-300°C for 1-20 min;
• prior to the film layer etching, a photoresist pattern is cured by thermal curing or ultraviolet (UV) curing at 50-500°C for 1-60 min to enhance the etch resistance and mechanical strength of the photoresist pattern and prevent deformation or delamination during the etching process;
• and
• in step 5, during the wet etching stage, isotropic etching is performed on the microstructures using chemical reagents to achieve a transition from simple longitudinal recesses to complex three-dimensional structures;
• and the wet etching is performed to simultaneously etch the width and depth in both the transverse and longitudinal directions, so as to increase the aspect ratio and enhance the anti-glare effect.