Semiconductor device with improved dielectric film structure and method of manufacturing same

A method of manufacturing a semiconductor device, comprising:

• forming a plurality of conductive components disposed within a first dielectric layer on a substrate, the plurality of conductive components interconnected with a respective plurality of integrated circuit components;
• forming at least one sensing electrode electrically coupled to at least one of the plurality of conductive components;
• forming a plurality of dielectric pedestals disposed within a landing area of the at least one sensing electrode;
• and
• forming at least one cavity using at least one moveable membrane positioned over the at least one sensing electrode.

A method of manufacturing a capacitive micromachined ultrasonic transducer (CMUT), comprising:

• depositing and patterning a sensing electrode on an integrated substrate, the sensing electrode formed to have a sidewall forming a wall of an isolation trench adjacent to the sensing electrode;
• depositing and patterning a plurality of dielectric pedestals on the sensing electrode;
• and
• disposing a moveable membrane over the plurality of dielectric pedestals, the moveable membrane forming at least one cavity between the moveable membrane and the sensing electrode, and the moveable membrane formed to contact the plurality of dielectric pedestals during an operation of the CMUT.