Substrate for semiconductor devices and method for manufacturing the same
AssigneeHyundai Mobis Co., Ltd.
InventorYu Cheol PARK
Life of this patent
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Abstract
A method for manufacturing a substrate for a semiconductor device for dissipating heat generated from a semiconductor device, and the substrate therefor are provided. The method includes bonding a first bonding layer including a sintered groove at a position corresponding to the semiconductor device on a heat sink, inserting a sintered metal into the sintered groove, bonding a second bonding layer including a circuit board on the first bonding layer, and bonding the semiconductor device on the second bonding layer. At least one of the first bonding layer, the second bonding layer, and the sintered metal include a preform material.
Claims16
A method for manufacturing a substrate for a semiconductor device for dissipating heat generated from a semiconductor device, the method comprising:
- (a) bonding a first bonding layer comprising a sintered groove at a position corresponding to the semiconductor device on a heat sink;
- (b) inserting a sintered metal into the sintered groove;
- (c) bonding a second bonding layer comprising a circuit board on the first bonding layer;
- and
- (d) bonding the semiconductor device on the second bonding layer,
- wherein at least one of the first bonding layer, the second bonding layer, and the sintered metal comprises a preform material.
A method for manufacturing a substrate for a semiconductor device for dissipating heat generated from a semiconductor device, the method comprising:
- (a) bonding a first bonding layer comprising a sintered groove at a position corresponding to the semiconductor device on a heat sink;
- (b) bonding a second bonding layer comprising a circuit board under the semiconductor device;
- (c) bonding a sintered metal at a position corresponding to a position of the semiconductor device under the second bonding layer;
- and
- (d) bonding the second bonding layer and the first bonding layer so that the sintered metal is inserted into the sintered groove of the first bonding layer,
- wherein at least one of the first bonding layer and the sintered metal comprises a paste material.
A method for manufacturing a substrate for a semiconductor device for dissipating heat generated from a semiconductor device, the method comprising:
- (a) printing a sintered metal on a heat sink at a position corresponding to the semiconductor device;
- (b) bonding a first bonding layer comprising a sintered groove into which the sintered metal is inserted on the heat sink so that the sintered metal is inserted into the sintered groove;
- (c) bonding a second bonding layer comprising a circuit board on the first bonding layer;
- and
- (d) bonding the semiconductor device on the second bonding layer,
- wherein the first bonding layer comprises a preform material, and
- wherein the sintered metal comprises a paste material.
A substrate for a semiconductor device for dissipating heat generated from a semiconductor device, the substrate comprising:
- a second bonding layer bonded under the semiconductor device to form a circuit board;
- a first bonding layer bonded under the second bonding layer and having a sintered groove formed at a position corresponding to the semiconductor device;
- and
- a heat sink bonded under the first bonding layer,
- wherein a sintered metal is bonded to the sintered groove of the first bonding layer.
Dependencies are inferred from the claim text.