Bow compensation of semiconductor substrate using plasma jet

Abstract

Methods and apparatus are provided for bow compensation of a semiconductor substrate or wafer using a plasma jet. In some embodiments, the apparatus may be for surface modification of a backside of a substrate, the substrate having a frontside, the frontside having electronic device features fabricated thereon. The apparatus may include, among other components, a nozzle configured to direct a plasma jet onto the backside of the substrate and thereby deposit a material on the backside of the substrate, wherein the backside layer comprises the material; an actuator (e.g., a chuck) configured to adjustably position the backside of the substrate with respect to the nozzle during deposition of the backside layer; and a controller configured to cause the plasma jet to deposit the backside layer on the backside of the substrate in a manner such that the backside layer has different properties varying at different locations of the backside layer.

Dependencies are inferred from the claim text.