Grinding system and method of grinding semiconductor structure

A grinding system, comprising:

• a chuck, configured to support a semiconductor substrate thereon;
• a control device, configured to generate a suction force signal according to a thickness information including a first mean thickness of a first zone of the semiconductor substrate and a second mean thickness of a second zone of the semiconductor substrate, wherein the first mean thickness is different from the second mean thickness;
• a suction device, electrically coupled to the control device, configured to provide a first suction force to the first zone of the semiconductor substrate and a second suction force to the second zone of the semiconductor substrate according to the suction force signal, wherein the first suction force is different from the second suction force;
• and
• a grinding wheel, configured to reduce a thickness of the first zone and the second zone of the semiconductor substrate.

A method of grinding a semiconductor structure, comprising:

• measuring a first mean thickness of a first zone of a semiconductor substrate and a second mean thickness of a second zone of the semiconductor substrate, to obtain a thickness information;
• placing the semiconductor substrate on a chuck;
• according to the thickness information, providing a first suction force to the first zone of the semiconductor substrate and a second suction force to the second zone of the semiconductor substrate, wherein the first suction force is different from the second suction force;
• and
• performing a grinding process on the first zone and the second zone of the semiconductor substrate while the first zone and the second zone are sucked by the first force and the second force respectively.