Hole transport layer for light-emitting device, method for preparing the same, and light-emitting device comprising the same

Abstract

Disclosed are a hole transport layer for an optoelectronic device, a method for preparing the same, and an optoelectronic device including the same. The hole transport layer for an optoelectronic device is a single composite layer having a first surface and a second surface located opposite the first surface; wherein the single composite layer includes a p-type conductive polymer, an n-type metal oxide, and a perfluorinated compound, and has a vertical composition gradient in which a concentration of the n-type metal oxide gradually decreases and a concentration of the perfluorinated compound gradually increases along a thickness direction from the first surface toward the second surface.

Dependencies are inferred from the claim text.