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US 2026/0293349 A1Published application
Methods and devices for increasing efficiency of image sensor
OwnerJi Heng Jiang, Hsin-Yi Kuo +2inventors
InventorsJi Heng Jiang, Hsin-Yi Kuo, Geng-Wei Chang, Kun-Yu Lin
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Abstract
The absorption efficiency of an image sensor is improved by forming a light reflective layer underneath a photodiode. A trench is formed at least partially located to one side of a gate structure. The trench is lined with a high-k adhesive layer, and then filled with a metal to form a light reflector. The trench is then sealed with a barrier layer. The light reflector increases reflectivity towards the photodiode, increasing the quantum efficiency.
Claims20
A method for making a semiconductor device, comprising:
- forming a trench at least partially located to a first side of a gate structure;
- lining the trench with a high-k adhesive layer;
- and
- filling the trench with a metal to form a light reflector.
1 more element
A semiconductor device, comprising:
- a substrate;
- a gate structure upon the substrate;
- a first dielectric layer over the substrate;
- and
- a light reflector in the first dielectric layer located to one side of the gate structure, the light reflector comprising a metal structure and a high-k adhesive layer.
2 more elements
An image sensor, comprising:
- a substrate;
- a gate structure on a first side of the substrate;
- a light reflector located on the first side of the substrate, the light reflector comprising a metal structure and a high-k adhesive layer on all but one side of the metal structure;
- and
- a photodiode on the substrate.
2 more elements
Dependencies are inferred from the claim text.