Method of manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsTomoharu OKADA, Yusuke KASAHARA
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Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive layer including a metal element and oxygen, and forming a first film on the conductive layer. The device further includes forming a concave portion in the first film, and forming a second film in the concave portion. The device further includes etching the second film in the concave portion using a first gas including Cl (chloride) to expose a surface of the conductive layer in the concave portion. The device further includes oxidizing the surface of the conductive layer exposed in the concave portion, and forming a semiconductor layer in the concave portion such that the semiconductor layer contacts the oxidized surface of the conductive layer.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a conductive layer including a metal element and oxygen;
- forming a first film on the conductive layer;
- forming a concave portion in the first film;
- forming a second film in the concave portion;
- etching the second film in the concave portion using a first gas including Cl (chloride) to expose a surface of the conductive layer in the concave portion;
- oxidizing the surface of the conductive layer exposed in the concave portion;
- and
- forming a semiconductor layer in the concave portion such that the semiconductor layer contacts the oxidized surface of the conductive layer.
A method of manufacturing a semiconductor device, comprising:
- forming a conductive layer including a metal element and oxygen;
- forming a film on the conductive layer;
- etching the film using a first gas including a first element to expose a surface of the conductive layer from the film;
- and
- oxidizing the surface of the conductive layer exposed from the film,
- wherein binding energy between the metal element and the first element is smaller than binding energy between the metal element and oxygen.
Dependencies are inferred from the claim text.