Pellicle and method of manufacturing thereof

A method for manufacturing a semiconductor device, comprising:

• forming a photo resist layer over a target layer;
• exposing the photo resist layer to patterned extreme ultraviolet radiation using a mask covered by a pellicle;
• and
• developing the exposed photo resist layer to form a patterned photo resist layer,
• wherein the pellicle comprises a membrane comprising:
• a plurality of nanotubes;
• a plurality of Ru—O—X catalyst structures at least partially covering a surface of each nanotube of the plurality of nanotubes, wherein X is a metal element selected from the group consisting of Mo, Ti, Nb, and Zr;
• and
• a protection layer covering the plurality of Ru—O—X structures and the surface of each nanotube.

A pellicle, comprising:

• a frame;
• and
• a membrane attached to the frame, wherein the membrane comprises:
• a plurality of nanotubes;
• a plurality of first nano-grains of a X-containing material partially covering the plurality of nanotubes, and a plurality of second nano-grains of a Ru-containing material formed on the plurality of first nano-grains to form a plurality of Ru—O—X structures, wherein X includes at least one of Mo, Ti, or Zr;
• and
• a capping material layer covering the plurality of Ru—O—X structures and the plurality of nanotubes.